- 专利标题： Semiconductor device having backside redistribution layers and method for fabricating the same
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申请号： US13789305申请日： 2013-03-07
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公开(公告)号： US08963292B2公开(公告)日： 2015-02-24
- 发明人: Steve Oliver , Warren Farnworth
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Fletcher Yoder, P.C.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L29/40 ; H01L23/485 ; H01L21/768 ; H01L23/00
摘要：
Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.
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