发明授权
- 专利标题： Semiconductor devices having E-fuse structures and methods of fabricating the same
- 专利标题（中）： 具有E熔丝结构的半导体器件及其制造方法
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申请号： US14033797申请日： 2013-09-23
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公开(公告)号： US08963284B2公开(公告)日： 2015-02-24
- 发明人: Deok-Kee Kim
- 申请人： Deok-Kee Kim
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0042075 20100504
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/538 ; H01L21/28 ; H01L23/525 ; H01L23/544 ; H01L27/06 ; H01L27/115 ; H01L29/66 ; H01L29/788
摘要：
A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion.
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