发明授权
- 专利标题： Semiconductor device with dual work function gate stacks and method for fabricating the same
- 专利标题（中）： 具有双功函数栅叠层的半导体器件及其制造方法
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申请号： US13845174申请日： 2013-03-18
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公开(公告)号： US08962463B2公开(公告)日： 2015-02-24
- 发明人: Yun-Hyuck Ji , Se-Aug Jang , Seung-Mi Lee , Hyung-Chul Kim
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2012-0154941 20121227
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L29/40
摘要：
A method for fabricating a semiconductor device includes forming a gate dielectric layer over a substrate; forming a metal containing layer, containing an effective work function adjust species, over the gate dielectric layer; forming an anti-reaction layer over the metal containing layer; increasing an amount of the effective work function adjust species contained in the metal containing layer; and forming, on the substrate, a gate stack by etching the anti-reaction layer, the metal containing layer, and the gate dielectric layer.
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