发明授权
- 专利标题： Manufacturing method of semiconductor device having semiconductor layers with different thicknesses
- 专利标题（中）： 具有不同厚度的半导体层的半导体器件的制造方法
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申请号： US13409728申请日： 2012-03-01
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公开(公告)号： US08962418B2公开(公告)日： 2015-02-24
- 发明人: Yutaka Hoshino
- 申请人： Yutaka Hoshino
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2011-053002 20110310
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/425 ; H01L21/336 ; H01L27/12 ; H01L29/51 ; H01L21/8234 ; H01L29/78
摘要：
A semiconductor device has a first element region, a second element region, and a first isolation region in a thin film region and a third element region, a fourth element region, and a second isolation region in a thick film region. It is manufactured with step (a) of providing a substrate having a silicon layer formed via an insulating layer, step (b) of forming element isolation insulating films in the silicon layer in the first isolation region and the second isolation region of the substrate step (c) of forming a hard mask in the thin film region, step (d) of forming silicon films over the silicon layer exposed from the hard mask in the third element region and the fourth element region, and step (e) of forming element isolation insulating films between the silicon films in the third element region and the fourth element region.
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