发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14475897申请日： 2014-09-03
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公开(公告)号： US08962394B2公开(公告)日： 2015-02-24
- 发明人: Takumi Ihara
- 申请人： Fujitsu Semiconductor Limited
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Fujitsu Patent Center
- 优先权： JP2011-068176 20110325
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/48 ; H01L23/00 ; H01L21/56
摘要：
A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. A heat radiator is disposed on the heat conductive member. The heat conductive member thermally connecting the semiconductor element to the heat radiator reduces the risk that electromagnetic noise may be emitted from or may be incident on the semiconductor element.
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