发明授权
- 专利标题： Method of manufacturing silicon single crystal, silicon single crystal, and wafer
- 专利标题（中）： 硅单晶，硅单晶和晶片的制造方法
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申请号： US13977495申请日： 2011-11-10
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公开(公告)号： US08961685B2公开(公告)日： 2015-02-24
- 发明人: Katsuhiko Nakai , Masamichi Ohkubo
- 申请人： Katsuhiko Nakai , Masamichi Ohkubo
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 代理机构： Brooks Kushman P.C.
- 优先权： JP2010-293594 20101228; JP2011-128562 20110608
- 国际申请： PCT/EP2011/069808 WO 20111110
- 国际公布： WO2012/089392 WO 20120705
- 主分类号： C30B15/14
- IPC分类号： C30B15/14 ; B32B3/02 ; H01L21/20 ; H01L21/36 ; H01L33/00 ; H01L29/04 ; C30B15/00 ; C30B29/06 ; C30B33/02 ; H01L21/02
摘要：
P-type silicon single crystals from which wafers having high resistivity, good radial uniformity of resistivity and less variation in resistivity can be obtained, are manufactured by the Czochralski method from an initial silicon melt in which boron and phosphorus are present, the boron concentration is not higher than 4E14 atoms/cm3 and the ratio of the phosphorus concentration to the boron concentration is not lower than 0.42 and not higher than 0.50.
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