Invention Grant
- Patent Title: Thin film transistor array substrate and method for manufacturing the same
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
-
Application No.: US13822920Application Date: 2012-11-28
-
Publication No.: US08952387B2Publication Date: 2015-02-10
- Inventor: Ce Ning , Xuehui Zhang , Jing Yang
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ladas & Parry LLP
- Priority: CN201210055454 20120305
- International Application: PCT/CN2012/085482 WO 20121128
- International Announcement: WO2013/131384 WO 20130912
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L29/10 ; H01L29/12 ; H01L31/0376 ; H01L31/20 ; H01L31/062 ; H01L31/113 ; H01L21/00 ; H01L21/84 ; H01L27/12 ; H01L21/3213 ; G02F1/1362

Abstract:
According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate includes: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process.
Public/Granted literature
- US20140183519A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC DEVICE Public/Granted day:2014-07-03
Information query
IPC分类: