Invention Grant
- Patent Title: Thin film transistor and display device using the same and method for manufacturing the same
- Patent Title (中): 薄膜晶体管及使用其的显示装置及其制造方法
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Application No.: US14186194Application Date: 2014-02-21
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Publication No.: US08906719B2Publication Date: 2014-12-09
- Inventor: Jae-Seob Lee , Yong-Hwan Park , Young-Shin Pyo
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: unknown Yongin, Gyunggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: unknown Yongin, Gyunggi-Do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2010-0052865 20100604
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L27/12 ; H01L51/00 ; G02F1/1333
Abstract:
A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.
Public/Granted literature
- US20140170790A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-06-19
Information query
IPC分类:
