Invention Grant
- Patent Title: Hybrid resistive memory devices and methods of operating and manufacturing the same
- Patent Title (中): 混合电阻式存储器件及其操作和制造方法
-
Application No.: US13718206Application Date: 2012-12-18
-
Publication No.: US08902632B2Publication Date: 2014-12-02
- Inventor: Young-bae Kim , Hyun-sang Hwang , Chang-jung Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do KR Gwangju
- Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee Address: KR Gyeonggi-Do KR Gwangju
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0049269 20120509
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56 ; H01L45/00 ; G11C11/21
Abstract:
Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state.
Public/Granted literature
- US20130301338A1 HYBRID RESISTIVE MEMORY DEVICES AND METHODS OF OPERATING AND MANUFACTURING THE SAME Public/Granted day:2013-11-14
Information query
