Invention Grant
- Patent Title: Monolithic Power Converter Package with Through Substrate vias
- Patent Title (中): 单片电源转换器封装,通过基板通孔
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Application No.: US13656461Application Date: 2012-10-19
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Publication No.: US08901742B2Publication Date: 2014-12-02
- Inventor: Eung San Cho , Dean Fernando , Tim Philips , Dan Clavette
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/04

Abstract:
According to an exemplary embodiment, a monolithic power converter package includes a monolithic die over a substrate, the monolithic die integrating a driver integrated circuit (IC) with a control power transistor and a sync power transistor connected in a half-bridge. The high side power input and a power output of the half-bridge each are disposed on a top surface of the monolithic die. The high side power input is electrically coupled to the substrate through a high side power connection. The power output is electrically coupled to the substrate through a power output connection. The low side power input of the half-bridge comprises a plurality of through substrate vias that extend through the monolithic die to electrically connect a low side power pad to the monolithic die.
Public/Granted literature
- US20130256905A1 Monolithic Power Converter Package with Through Substrate Vias Public/Granted day:2013-10-03
Information query
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