发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13476468申请日： 2012-05-21
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公开(公告)号： US08901553B2公开(公告)日： 2014-12-02
- 发明人: Naoya Inoue , Kishou Kaneko , Yoshihiro Hayashi
- 申请人： Naoya Inoue , Kishou Kaneko , Yoshihiro Hayashi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2011-117374 20110525
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/12 ; H01L29/78 ; H01L29/786 ; H01L21/768 ; H01L23/532 ; H01L27/12 ; H01L23/522 ; H01L29/423
摘要：
The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer. A diffusion prevention film is formed between the first wiring layer and a second wiring layer. A gate insulation film is formed by: forming a recess over the upper face of the diffusion prevention film in the region overlapping with the gate electrode and around the region; and thinning the part.
公开/授权文献
- US20120298986A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2012-11-29
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