发明授权
US08879326B2 Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
有权
非易失性半导体存储器件包括多个存储器单元和耦合到存储器单元的端部的虚拟单元
- 专利标题： Nonvolatile semiconductor memory device including plural memory cells and a dummy cell coupled to an end of a memory cell
- 专利标题（中）： 非易失性半导体存储器件包括多个存储器单元和耦合到存储器单元的端部的虚拟单元
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申请号： US13919564申请日： 2013-06-17
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公开(公告)号： US08879326B2公开(公告)日： 2014-11-04
- 发明人: Hiroaki Hazama , Norio Ohtani
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2002-286055 20020930
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/06 ; G11C16/10 ; H01L27/115 ; G11C16/34 ; G11C16/14
摘要：
A nonvolatile semiconductor memory device having a plurality of electrically rewritable nonvolatile memory cells connected in series together includes a select gate transistor connected in series to the serial combination of memory cells. A certain one of the memory cells which is located adjacent to the select gets transistor is for use as a dummy cell. This dummy cell is not used for data storage. During data erasing, the dummy cell is applied with the same bias voltage as that for the other memory cells.
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