发明授权
- 专利标题： Non-volatile memory cell containing an in-cell resistor
- 专利标题（中）： 含有单元电阻的非易失性存储单元
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申请号： US13552355申请日： 2012-07-18
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公开(公告)号： US08879299B2公开(公告)日： 2014-11-04
- 发明人: Kun Hou , Yung-Tin Chen , Zhida Lan , Huiwen Xu
- 申请人： Kun Hou , Yung-Tin Chen , Zhida Lan , Huiwen Xu
- 申请人地址： US CA Milpitas
- 专利权人： Sandisk 3D LLC
- 当前专利权人： Sandisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： The Marbury Law Group PLLC
- 主分类号： G11C11/36
- IPC分类号： G11C11/36 ; H01L27/24 ; G11C17/16 ; H01L45/00 ; G11C13/00
摘要：
A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.
公开/授权文献
- US20130094278A1 Non-Volatile Memory Cell Containing an In-Cell Resistor 公开/授权日：2013-04-18
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