发明授权
- 专利标题： Magnetoresistive element and magnetic memory
- 专利标题（中）： 磁阻元件和磁记忆体
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申请号： US14168627申请日： 2014-01-30
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公开(公告)号： US08878324B2公开(公告)日： 2014-11-04
- 发明人: Yushi Kato , Tadaomi Daibou , Eiji Kitagawa , Takao Ochiai , Takahide Kubota , Shigemi Mizukami , Terunobu Miyazaki
- 申请人： Kabushiki Kaisha Toshiba , Tohoku University
- 申请人地址： JP Tokyo JP Sendai-shi
- 专利权人： Kabushiki Kaisha Toshiba,Tohoku University
- 当前专利权人： Kabushiki Kaisha Toshiba,Tohoku University
- 当前专利权人地址： JP Tokyo JP Sendai-shi
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-208293 20120921
- 主分类号： H01L27/105
- IPC分类号： H01L27/105 ; H01L43/10
摘要：
The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %≦x≦82 atm %, 18 atm %≦y≦23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.
公开/授权文献
- US20140145279A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 公开/授权日：2014-05-29
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