Invention Grant
US08869436B2 Resistive switching random access memory structure and method to recreate filament and recover resistance window
有权
电阻式开关随机存取存储器结构和重建灯丝并恢复电阻窗的方法
- Patent Title: Resistive switching random access memory structure and method to recreate filament and recover resistance window
- Patent Title (中): 电阻式开关随机存取存储器结构和重建灯丝并恢复电阻窗的方法
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Application No.: US13779030Application Date: 2013-02-27
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Publication No.: US08869436B2Publication Date: 2014-10-28
- Inventor: Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00
Abstract:
The present disclosure provides one embodiment of a method for operating a resistive random access memory (RRAM) cell. The method includes performing a forming operation to the RRAM cell with a forming voltage; performing a number of set/reset operation cycles to the RRAM cell; and performing a recreating process to the RRAM cell to recover RRAM resistance by applying a recreating voltage. Each of the number of set/reset operation cycles includes a set operation with a set voltage. The recreating voltage is greater than the set voltage.
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