发明授权
- 专利标题: Multi-bit-per-cell flash memory device with non-bijective mapping
- 专利标题(中): 具有非双射映射的多比特单元闪存器件
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申请号: US12977097申请日: 2010-12-23
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公开(公告)号: US08848442B2公开(公告)日: 2014-09-30
- 发明人: Eran Sharon , Idan Alrod
- 申请人: Eran Sharon , Idan Alrod
- 申请人地址: IL Kfar Saba
- 专利权人: Sandisk IL Ltd.
- 当前专利权人: Sandisk IL Ltd.
- 当前专利权人地址: IL Kfar Saba
- 代理机构: Alston & Bird LLP
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/10 ; G11C16/06 ; G11C16/34 ; G06F11/10 ; G11C7/10 ; G11C29/24 ; G11C11/56
摘要:
To store input data in a plurality of memory cells, a mapping function of bit sequences to physical parameter states of the cells is provided. The cells are programmed, in accordance with the mapping function, to store the input data, in a way that would store uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function. To store input data in a single memory cell, a mapping function of bit sequences to states of a physical parameter of the cell, such that if uniformly distributed data were stored in a plurality of such memory cells then the states of the physical parameter of the cells would be distributed non-uniformly, is provided. The memory cell is programmed to store the input data in accordance with the mapping function.
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