发明授权
US08848442B2 Multi-bit-per-cell flash memory device with non-bijective mapping 有权
具有非双射映射的多比特单元闪存器件

Multi-bit-per-cell flash memory device with non-bijective mapping
摘要:
To store input data in a plurality of memory cells, a mapping function of bit sequences to physical parameter states of the cells is provided. The cells are programmed, in accordance with the mapping function, to store the input data, in a way that would store uniformly distributed data with a programming state distribution other than any native state distribution of the mapping function. To store input data in a single memory cell, a mapping function of bit sequences to states of a physical parameter of the cell, such that if uniformly distributed data were stored in a plurality of such memory cells then the states of the physical parameter of the cells would be distributed non-uniformly, is provided. The memory cell is programmed to store the input data in accordance with the mapping function.
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