A cross-point variable resistance nonvolatile memory device comprises: a memory cell array; a column decoder and pre-charge circuit which pre-charges a selected word line to a first voltage in a period P1 among the period P1, a period P2, and a period S that are included in this order in a read operation of a memory cell; a low decoder driver which pre-charges a selected word line to the first voltage in the periods P1 and P2 and sets the selected word line to a third voltage different from the first voltage in the period S; a feedback controlled bit line voltage clamp circuit which sets the selected bit line to a second voltage in the periods P2 and S; and a sense amplifier which determines the resistance state in a memory cell at a cross-point of the selected word line and the selected bit line in the period S.