发明授权
- 专利标题： Semiconductor storage device
- 专利标题（中）： 半导体存储设备
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申请号： US13814104申请日： 2011-08-26
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公开(公告)号： US08830740B2公开(公告)日： 2014-09-09
- 发明人: Yoshitaka Sasago , Hiroyuki Minemura , Takashi Kobayashi , Toshimichi Shintani , Satoru Hanzawa , Masaharu Kinoshita
- 申请人： Yoshitaka Sasago , Hiroyuki Minemura , Takashi Kobayashi , Toshimichi Shintani , Satoru Hanzawa , Masaharu Kinoshita
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2010-200447 20100908
- 国际申请： PCT/JP2011/004751 WO 20110826
- 国际公布： WO2012/032730 WO 20120315
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L47/00 ; G11C13/00
摘要：
The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between a word line (2) and a bit line (3) and have a selection element and a storage element that are parallel connected with each other are entirely set, and after that, a part of the cells corresponding to a data pattern is reset. Alternatively, the reverse of the operation is carried out.
公开/授权文献
- US20130141968A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2013-06-06
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