Invention Grant
- Patent Title: Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portion
- Patent Title (中): 形成包括多价金属氧化物部分和含氧电介质部分的可编程区域的方法
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Application No.: US14105623Application Date: 2013-12-13
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Publication No.: US08809157B2Publication Date: 2014-08-19
- Inventor: D. V. Nirmal Ramaswamy , Beth R. Cook , Lei Bi , Wayne Huang , Ian C. Laboriante
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method of forming a memory cell includes forming one of multivalent metal oxide material or oxygen-containing dielectric material over a first conductive structure. An outer surface of the multivalent metal oxide material or the oxygen-containing dielectric material is treated with an organic base. The other of the multivalent metal oxide material or oxygen-containing dielectric material is formed over the treated outer surface. A second conductive structure is formed over the other of the multivalent metal oxide material or oxygen-containing dielectric material.
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