Invention Grant
- Patent Title: Method of programming a nonvolatile memory device
- Patent Title (中): 非易失性存储器件编程方法
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Application No.: US13546120Application Date: 2012-07-11
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Publication No.: US08767475B2Publication Date: 2014-07-01
- Inventor: Yong-Sung Cho , Nam-hee Lee , Sang-Yong Yoon
- Applicant: Yong-Sung Cho , Nam-hee Lee , Sang-Yong Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0073416 20110725
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/34 ; G11C11/56 ; G11C16/10

Abstract:
In method of programming a nonvolatile memory device, multi-bit data are loaded into a plurality of page buffers. Multi-level cells included in a multi-level cell block are programmed to a plurality of intermediate program states including a first intermediate program state and a second intermediate program state which is higher than the first intermediate program state based on the multi-bit data. Whether the multi-level cells are programmed to the plurality of intermediate program states is verified. Cell group information for the first intermediate program state is generated by checking whether a result of the verification for the second intermediate program state satisfies a predetermined criterion. The multi-level cells are programmed to a plurality of target program states corresponding to the multi-bit data based on the cell group information.
Public/Granted literature
- US20130028018A1 METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE Public/Granted day:2013-01-31
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