发明授权
US08755213B2 Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
失效
需要双极性编程的双极型二极管三维存储器的解码方案
- 专利标题: Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
- 专利标题(中): 需要双极性编程的双极型二极管三维存储器的解码方案
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申请号: US13407848申请日: 2012-02-29
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公开(公告)号: US08755213B2公开(公告)日: 2014-06-17
- 发明人: John K. DeBrosse , Kailash Gopalakrishnan , Chung H. Lam , Jing Li
- 申请人: John K. DeBrosse , Kailash Gopalakrishnan , Chung H. Lam , Jing Li
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Ido Tuchman; Vazken Alexanian
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C13/00
摘要:
A system and method for operating a bipolar memory cell array including a bidirectional access diode. The system includes a column voltage. The column voltage switch includes column voltages and an output electrically coupled to the bidirectional access diode. The column voltages include at least one write-one column voltage and at least one write-zero column voltage. The system also includes a row voltage switch. The row voltage switch includes row voltages and an output electrically coupled to the bidirectional access diode. The row voltages include at least one write-one row voltage and at least one write-zero row voltage. The system further includes a column decoder and a row decoder electrically coupled to a select line of the column voltage switch and row voltage switch, respectively. The system includes a write driver electrically coupled to the select lines of the row and column switches.
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