发明授权
US08755213B2 Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming 失效
需要双极性编程的双极型二极管三维存储器的解码方案

Decoding scheme for bipolar-based diode three-dimensional memory requiring bipolar programming
摘要:
A system and method for operating a bipolar memory cell array including a bidirectional access diode. The system includes a column voltage. The column voltage switch includes column voltages and an output electrically coupled to the bidirectional access diode. The column voltages include at least one write-one column voltage and at least one write-zero column voltage. The system also includes a row voltage switch. The row voltage switch includes row voltages and an output electrically coupled to the bidirectional access diode. The row voltages include at least one write-one row voltage and at least one write-zero row voltage. The system further includes a column decoder and a row decoder electrically coupled to a select line of the column voltage switch and row voltage switch, respectively. The system includes a write driver electrically coupled to the select lines of the row and column switches.
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