Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13630467Application Date: 2012-09-28
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Publication No.: US08742465B2Publication Date: 2014-06-03
- Inventor: Takehiro Ueda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-153510 20060601
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a semiconductor substrate, the method includes flowing a current in the first conductor, causing material of the first conductor to flow outward near a coupling portion connecting the first conductor to the second conductor, and cutting the first cutting target region and the second cutting target region.
Public/Granted literature
- US20130026613A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-31
Information query
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