发明授权
US08735989B2 Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
有权
包括具有绝缘栅双极晶体管的主元件和具有电阻器和绝缘栅双极晶体管的感测元件的半导体器件
- 专利标题： Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor
- 专利标题（中）： 包括具有绝缘栅双极晶体管的主元件和具有电阻器和绝缘栅双极晶体管的感测元件的半导体器件
-
申请号： US13290991申请日： 2011-11-07
-
公开(公告)号： US08735989B2公开(公告)日： 2014-05-27
- 发明人: Kenichi Matsushita
- 申请人： Kenichi Matsushita
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JP2010-250178 20101108; JP2011-161130 20110722
- 主分类号： H01L29/732
- IPC分类号： H01L29/732
摘要：
According to one embodiment, a semiconductor device includes a main element and a sense element. The main element is connected between a collector terminal and an emitter terminal. The main element has an insulated gate bipolar transistor structure. The sense element is connected in parallel with the main element via a sense resistor between the collector terminal and the emitter terminal. The sense element has an insulated gate bipolar transistor structure with a feedback capacitance larger than a feedback capacitance of the main element.
公开/授权文献
- US20120112241A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-05-10
信息查询
IPC分类:
