发明授权
- 专利标题： Light emitting transistor
- 专利标题（中）： 发光晶体管
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申请号： US13850613申请日： 2013-03-26
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公开(公告)号： US08735880B2公开(公告)日： 2014-05-27
- 发明人: Junji Kido , Daigo Aoki
- 申请人： Dai Nippon Printing Co., Ltd.
- 申请人地址： JP Tokyo-to JP Yonezawa, Yamagata
- 专利权人： Dai Nippon Printing Co., Ltd.,Junji Kido
- 当前专利权人： Dai Nippon Printing Co., Ltd.,Junji Kido
- 当前专利权人地址： JP Tokyo-to JP Yonezawa, Yamagata
- 代理机构： Ladas & Parry LLP
- 优先权： JP2004-106154 20040331
- 主分类号： H01L35/24
- IPC分类号： H01L35/24 ; H01L51/00 ; H01L27/15 ; H01L31/12 ; H01L51/52 ; H01L33/40
摘要：
A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent.
公开/授权文献
- US20130270532A1 LIGHT EMITTING TRANSISTOR 公开/授权日：2013-10-17
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