Invention Grant
US08643147B2 Seal ring structure with improved cracking protection and reduced problems
有权
密封环结构具有改进的开裂保护和减少的问题
- Patent Title: Seal ring structure with improved cracking protection and reduced problems
- Patent Title (中): 密封环结构具有改进的开裂保护和减少的问题
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Application No.: US11933931Application Date: 2007-11-01
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Publication No.: US08643147B2Publication Date: 2014-02-04
- Inventor: Shin-Puu Jeng , Shih-Hsun Hsu , Shang-Yun Hou , Hao-Yi Tsai , Chen-Hua Yu
- Applicant: Shin-Puu Jeng , Shih-Hsun Hsu , Shang-Yun Hou , Hao-Yi Tsai , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
An integrated circuit structure includes a lower dielectric layer; an upper dielectric layer over the lower dielectric layer; and a seal ring. The seal ring includes an upper metal line in the upper dielectric layer; a continuous via bar underlying and abutting the upper metal line, wherein the continuous via bar has a width greater than about 70 percent of a width of the upper metal line; a lower metal line in the lower dielectric layer; and a via bar underlying and abutting the lower metal line. The via bar has a width substantially less than a half of a width of the lower metal line.
Public/Granted literature
- US20090115024A1 Seal ring structure with improved cracking protection and reduced problems Public/Granted day:2009-05-07
Information query
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