发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13067386申请日： 2011-05-27
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公开(公告)号： US08618537B2公开(公告)日： 2013-12-31
- 发明人: Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人： Kishou Kaneko , Naoya Inoue , Yoshihiro Hayashi
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2010-142003 20100622; JP2011-010002 20110120
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A semiconductor device includes, in a first region over a semiconductor substrate, a first insulating layer, a first wiring, a second insulating layer, a third insulating layer, and a via and a second wiring embedded in the second insulating layer and the third insulating layer through a barrier metal, and includes, in a second region, the first insulating layer, a gate electrode, the second insulating layer, a semiconductor layer located, the third insulating layer, and a first electric conductor and a second electric conductor embedded in the third insulating layer so as to sandwich the gate electrode in a position overlapped with the semiconductor layer in a plan view through a barrier metal and coupled to the semiconductor layer through the barrier metal.
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