Invention Grant
- Patent Title: Solder alloy and semiconductor device
- Patent Title (中): 焊锡合金和半导体器件
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Application No.: US13125369Application Date: 2009-04-13
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Publication No.: US08598707B2Publication Date: 2013-12-03
- Inventor: Akira Maeda , Kenji Otsu , Akira Yamada
- Applicant: Akira Maeda , Kenji Otsu , Akira Yamada
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-274545 20081024
- International Application: PCT/JP2009/057438 WO 20090413
- International Announcement: WO2010/047139 WO 20100429
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A solder alloy includes 5 to 15% by mass of Sb, 3 to 8% by mass of Cu, 0.01 to 0.15% by mass of Ni, and 0.5 to 5% by mass of In. The remainder thereof includes Sn and unavoidable impurities. Thereby, highly reliable solder alloy and semiconductor device suppressing a fracture in a semiconductor element and improving crack resistance of a solder material can be obtained.
Public/Granted literature
- US20110198755A1 SOLDER ALLOY AND SEMICONDUCTOR DEVICE Public/Granted day:2011-08-18
Information query
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