发明授权
- 专利标题： Method for fabricating semiconductor device with buried gates
- 专利标题（中）： 制造具有埋栅的半导体器件的方法
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申请号： US12832137申请日： 2010-07-08
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公开(公告)号： US08598012B2公开(公告)日： 2013-12-03
- 发明人: Jong-Han Shin , Noh-Jung Kwak , Myung-Ok Kim
- 申请人： Jong-Han Shin , Noh-Jung Kwak , Myung-Ok Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP&T Group LLP
- 优先权： KR10-2009-0134777 20091230
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/3205
摘要：
A method for fabricating a semiconductor device includes sequentially stacking a pad oxide layer and a hard mask layer over a substrate, forming a device isolation layer over the substrate, forming a capping layer pattern configured to open a first region of the substrate and cover a second region of the substrate, removing the hard mask layer, removing the capping layer pattern, and removing the pad oxide layer.
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