发明授权
- 专利标题: High-frequency power amplifier device
- 专利标题(中): 高频功放器
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申请号: US13309629申请日: 2011-12-02
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公开(公告)号: US08564366B2公开(公告)日: 2013-10-22
- 发明人: Hisanori Namie , Masashi Maruyama
- 申请人: Hisanori Namie , Masashi Maruyama
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2010-280296 20101216
- 主分类号: H03F1/14
- IPC分类号: H03F1/14 ; H03F3/68 ; H03F3/195
摘要:
Disclosed is a high-frequency power amplifier device capable of reducing a talk current. For example, the high-frequency power amplifier device has first and second power amplifier circuits, first and second transmission lines, and a region in which the first and second transmission lines are disposed close to each other. Either the first or second power amplifier circuit becomes activated in accordance with an output level. When the second power amplifier circuit is activated, currents flowing in the first and second transmission lines are transmitted in the same direction so that magnetic coupling occurs to strengthen each transmission line's magnetic force. When, on the other hand, the first power amplifier circuit is activated, currents flowing in the first and second transmission lines are transmitted in the opposite directions so that magnetic coupling occurs to weaken each transmission line's magnetic force.
公开/授权文献
- US20120154043A1 HIGH-FREQUENCY POWER AMPLIFIER DEVICE 公开/授权日:2012-06-21
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