Invention Grant
US08546863B2 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
有权
包含纳米线的非易失性存储单元及其制造方法
- Patent Title: Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
- Patent Title (中): 包含纳米线的非易失性存储单元及其制造方法
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Application No.: US12594673Application Date: 2008-04-17
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Publication No.: US08546863B2Publication Date: 2013-10-01
- Inventor: Almudena Huerta , Michiel Jos Van Duuren , Nader Akil , Dusan Golubovic , Mohamed Boutchich
- Applicant: Almudena Huerta , Michiel Jos Van Duuren , Nader Akil , Dusan Golubovic , Mohamed Boutchich
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP07106502 20070419
- International Application: PCT/IB2008/051478 WO 20080417
- International Announcement: WO2008/129478 WO 20081030
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336
Abstract:
A memory cell, the memory cell comprising a substrate, a nanowire extending along a vertical trench formed in the substrate, a control gate surrounding the nanowire, and a charge storage structure formed between the control gate and the nanowire.
Public/Granted literature
- US20100117138A1 NONVOLATILE MEMORY CELL COMPRISING A NONWIRE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-05-13
Information query
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