Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12905801Application Date: 2010-10-15
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Publication No.: US08497553B2Publication Date: 2013-07-30
- Inventor: Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
- Applicant: Hiroto Yamagiwa , Shingo Hashizume , Ayanori Ikoshi , Manabu Yanagihara , Yasuhiro Uemoto
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-024231 20100205
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/66 ; H01L31/06 ; H01L21/338 ; H02H3/00 ; H02H9/02
Abstract:
A semiconductor device includes a first transistor formed on a first element region, and a first protecting element including a second transistor formed on a second element region. A second protecting element ohmic electrode is connected to a first gate electrode, a first protecting element ohmic electrode is connected to a first ohmic electrode, and a first protecting element gate electrode is connected to at least one of the first protecting element ohmic electrode and the second protecting element ohmic electrode. The second element region is smaller in area than the first element region.
Public/Granted literature
- US20110193171A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-08-11
Information query
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