发明授权
- 专利标题: Method for defect isolation of thin-film solar cell
- 专利标题(中): 薄膜太阳能电池的缺陷隔离方法
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申请号: US12569024申请日: 2009-09-29
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公开(公告)号: US08497150B2公开(公告)日: 2013-07-30
- 发明人: Yung-Yuan Chang , Hui-Chu Lin
- 申请人: Yung-Yuan Chang , Hui-Chu Lin
- 申请人地址: TW Taichung County
- 专利权人: Nexpower Technology Corp.
- 当前专利权人: Nexpower Technology Corp.
- 当前专利权人地址: TW Taichung County
- 代理机构: Sinorica, LLC
- 代理商 Ming Chow
- 优先权: TW97138513A 20081007
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect isolation method includes the steps of: detecting at least a defect formed in thin-film solar cell and acquiring the positions of the defects, and applying a laser light to scribe the outer circumference of the defects according to the positions of the defects so as to form at least an isolation groove having a closed-curve configuration.
公开/授权文献
- US20100087025A1 METHOD FOR DEFECT ISOLATION OF THIN-FILM SOLAR CELL 公开/授权日:2010-04-08
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