发明授权
- 专利标题: Coating treatment method
- 专利标题(中): 涂层处理方法
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申请号: US13236750申请日: 2011-09-20
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公开(公告)号: US08496991B2公开(公告)日: 2013-07-30
- 发明人: Kousuke Yoshihara , Tomohiro Iseki
- 申请人: Kousuke Yoshihara , Tomohiro Iseki
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-249733 20060914
- 主分类号: B05D3/12
- IPC分类号: B05D3/12
摘要:
The present invention supplies a solvent to a front surface of a substrate while rotating the substrate. The substrate is acceleratingly rotated to a first number of rotations, and a resist solution is supplied to a central portion of the substrate during the accelerating rotation and the rotation at a first number of rotations. The substrate is deceleratingly rotated to a second number of rotations, and after the number of rotations of the substrate reaches the second number of rotations, the resist solution is discharged to the substrate. The substrate is then acceleratingly rotated to a third number of rotations higher than the second number of rotations so that the substrate is rotated at the third number of rotations. According to the present invention, consumption of the resist solution can be suppressed and a high in-plane uniformity can be obtained for the film thickness of the resist film.
公开/授权文献
- US20120034792A1 COATING TREATMENT METHOD 公开/授权日:2012-02-09
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