发明授权
- 专利标题： Damascene contacts on III-V CMOS devices
- 专利标题（中）： Damascene接触III-V CMOS器件
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申请号： US12689952申请日： 2010-01-19
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公开(公告)号： US08492261B2公开(公告)日： 2013-07-23
- 发明人: Marleen Van Hove , Joff Derluyn
- 申请人： Marleen Van Hove , Joff Derluyn
- 申请人地址： BE Leuven
- 专利权人： IMEC
- 当前专利权人： IMEC
- 当前专利权人地址： BE Leuven
- 代理机构： Knobbe Martens Olson & Bear LLP
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3205
摘要：
A method for manufacturing a III-V CMOS device is disclosed. The device includes a first and second main contact and a control contact. In one aspect, the method includes providing the control contact by using damascene processing. The method thus allows obtaining a control contact with a length of between about 20 nm and 5 μm and with good Schottky behavior. Using low-resistive materials such as Cu allows reducing the gate resistance thus improving the high-frequency performance of the III-V CMOS device.
公开/授权文献
- US20100176421A1 DAMASCENE CONTACTS ON III-V CMOS DEVICES 公开/授权日：2010-07-15
信息查询
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