发明授权
- 专利标题： Semiconductor device manufacturing method
- 专利标题（中）： 半导体器件制造方法
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申请号： US13487295申请日： 2012-06-04
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公开(公告)号： US08492219B2公开(公告)日： 2013-07-23
- 发明人: Masumi Saitoh , Toshinori Numata , Yukio Nakabayashi
- 申请人： Masumi Saitoh , Toshinori Numata , Yukio Nakabayashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/337 ; H01L21/8232 ; H01L21/336 ; H01L21/00
摘要：
In a semiconductor device manufacturing method, a first semiconductor region which includes a narrow portion and a wide portion is formed in an upper portion of a semiconductor substrate, a gate insulating film is formed on at least side surfaces of the narrow portion, a gate electrode is formed on the gate insulating film, a mask pattern that covers the wide portion is formed, ion implantation of an impurity is performed with the mask pattern as a mask to form an extension impurity region in the narrow portion, the mask pattern is removed, a heat treatment is performed to activate the impurity, a gate sidewall is formed on a side surface of the gate electrode, epitaxial growth of a semiconductor film is performed on the narrow portion and the wide portion after the formation of the gate sidewall, and source-drain regions is formed on both sides of the gate electrode.
公开/授权文献
- US20120282743A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 公开/授权日：2012-11-08
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