A semiconductor memory device includes a plurality of parallel word lines, a plurality of parallel bit lines formed crossing the plurality of word lines, and a plurality of memory cells arranged at intersections of the word lines and the bit lines. Each memory cell has one end connected to the word line and the other end connected to the bit line. The device also comprises a drive circuit operative to selectively apply a voltage for data read/write across the word line and the bit line. It further comprises a sense amplifier circuit connected to the plurality of bit lines and operative to read/write data stored in the memory cell. The device also comprises a bit-line drive auxiliary circuit operative to selectively adjust the potentials on the plurality of bit lines based on data read out of the memory cell by the sense amplifier circuit.