发明授权
- 专利标题： Method of manufacturing plasmon generator
- 专利标题（中）： 等离子体发生器的制造方法
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申请号： US13235856申请日： 2011-09-19
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公开(公告)号： US08454848B2公开(公告)日： 2013-06-04
- 发明人: Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Hironori Araki , Kazuki Sato , Kazumasa Yasuda
- 申请人： Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Hironori Araki , Kazuki Sato , Kazumasa Yasuda
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Oliff & Berridge, PLC
- 主分类号： B29D11/00
- IPC分类号： B29D11/00
摘要：
A method of manufacturing the plasmon generator includes the steps of: forming a base part made of a dielectric material; forming a metal film that is to later become the plasmon generator; and forming a filler layer made of a dielectric material. The base part includes a base surface and a protruding part that protrudes from the base surface. The protruding part has a top surface that is different in level from the base surface, and a first sidewall connecting the top surface of the protruding part to the base surface. The metal film includes an adhesion part adhering to the first sidewall. The filler layer has a second sidewall disposed such that the adhesion part is interposed between the first sidewall and the second sidewall.
公开/授权文献
- US20130068722A1 METHOD OF MANUFACTURING PLASMON GENERATOR 公开/授权日：2013-03-21
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