发明授权
US08441095B2 Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation
有权
具有用于将电压波动转换为频率波动的环形振荡器和MISFET的半导体器件
- 专利标题： Semiconductor device having a ring oscillator and MISFET for converting voltage fluctuation to frequency fluctuation
- 专利标题（中）： 具有用于将电压波动转换为频率波动的环形振荡器和MISFET的半导体器件
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申请号： US13438347申请日： 2012-04-03
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公开(公告)号： US08441095B2公开(公告)日： 2013-05-14
- 发明人: Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- 申请人： Yusuke Kanno , Hiroyuki Mizuno , Yoshihiko Yasu , Kenji Hirose , Takahiro Irita
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2005-166714 20050607
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/70 ; H01L25/00
摘要：
A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.
公开/授权文献
- US20120187981A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 公开/授权日：2012-07-26
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