Invention Grant
- Patent Title: Non-volatile memory storage device and operation method thereof
- Patent Title (中): 非易失性存储器及其操作方法
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Application No.: US12183229Application Date: 2008-07-31
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Publication No.: US08332607B2Publication Date: 2012-12-11
- Inventor: Chih Wei Tsai , Chuang Cheng , Yung Li Ji , Shih Chieh Tai , Chih Cheng Tu , Fuja Shone
- Applicant: Chih Wei Tsai , Chuang Cheng , Yung Li Ji , Shih Chieh Tai , Chih Cheng Tu , Fuja Shone
- Applicant Address: TW Hsinchu
- Assignee: Skymedi Corporation
- Current Assignee: Skymedi Corporation
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A non-volatile memory storage device has a non-volatile memory, e.g., a flash memory, and a controller coupled to the non-volatile memory. The controller comprises a plurality of control circuits and an arbitration circuit. Each control circuit is configured to generate a request to update the chip-enable (CE) signals for non-volatile memory, and the arbitration circuit is configured to determine when the requests are acknowledged. The arbitration circuit generates acknowledge signals to the control circuits when all of the requests of the control circuits have been received by the arbitration circuit. The CE signals for non-volatile memory are updated when requests are acknowledged.
Public/Granted literature
- US20100030933A1 NON-VOLATILE MEMORY STORAGE DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2010-02-04
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