Invention Grant
- Patent Title: Write operation for phase change memory
- Patent Title (中): 相变存储器的写操作
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Application No.: US12846775Application Date: 2010-07-29
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Publication No.: US08320172B2Publication Date: 2012-11-27
- Inventor: Hernan A. Castro , Jeremy Hirst , Stephen Tang
- Applicant: Hernan A. Castro , Jeremy Hirst , Stephen Tang
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G11C11/50
- IPC: G11C11/50
Abstract:
Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell.
Public/Granted literature
- US20120026786A1 WRITE OPERATION FOR PHASE CHANGE MEMORY Public/Granted day:2012-02-02
Information query
