发明授权
US08313664B2 Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
有权
用于实时预测晶圆的自偏压和等离子体处理室中ESC电压的反馈控制的高效准确的方法
- 专利标题： Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
- 专利标题（中）： 用于实时预测晶圆的自偏压和等离子体处理室中ESC电压的反馈控制的高效准确的方法
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申请号： US12623243申请日： 2009-11-20
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公开(公告)号： US08313664B2公开(公告)日： 2012-11-20
- 发明人: Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
- 申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： G01L21/30
- IPC分类号： G01L21/30
摘要：
In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
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