Invention Grant
US08299612B2 IC devices having TSVS including protruding tips having IMC blocking tip ends
有权
具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
- Patent Title: IC devices having TSVS including protruding tips having IMC blocking tip ends
- Patent Title (中): 具有TSVS的IC器件包括具有IMC阻塞末端的突出尖端
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Application No.: US13232682Application Date: 2011-09-14
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Publication No.: US08299612B2Publication Date: 2012-10-30
- Inventor: Jeffrey A. West , Young-Joon Park
- Applicant: Jeffrey A. West , Young-Joon Park
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/40
Abstract:
A through substrate via (TSV) die includes a plurality of TSVs including an outer dielectric sleeve, an inner metal core and protruding TSV tips including sidewalls that emerge from the TSV die. A passivation layer lateral to protruding TSV tips is on a portion of the sidewalls of protruding TSV tips. The passivation layers is absent from a distal portion of protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends which cover a portion of the TSV sidewalls, are over a topmost surface of the outer dielectric sleeve, and have a maximum cross sectional area that is ≧25% more as compared to a cross sectional area of the protruding TSV tips below the bulbous distal tip ends.
Public/Granted literature
- US20120235296A1 IC DEVICES HAVING TSVS INCLUDING PROTRUDING TIPS HAVING IMC BLOCKING TIP ENDS Public/Granted day:2012-09-20
Information query
IPC分类:
