Invention Grant
- Patent Title: Magnetic tunnel junction with electronically reflective insulative spacer
- Patent Title (中): 磁性隧道结与电子反射绝缘垫片
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Application No.: US12943979Application Date: 2010-11-11
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Publication No.: US08289758B2Publication Date: 2012-10-16
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/16
- IPC: G11C11/16
Abstract:
Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
Public/Granted literature
- US20110049658A1 MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER Public/Granted day:2011-03-03
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