发明授权
- 专利标题： Semiconductor device comprising oxide semiconductor and method for manufacturing the same
- 专利标题（中）： 包含氧化物半导体的半导体器件及其制造方法
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申请号： US13014036申请日： 2011-01-26
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公开(公告)号： US08274079B2公开(公告)日： 2012-09-25
- 发明人: Shunpei Yamazaki
- 申请人： Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2010-024385 20100205
- 主分类号： H01L29/10
- IPC分类号： H01L29/10
摘要：
A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.
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