发明授权
US08270703B2 Defect inspection apparatus, defect inspection method, and manufacture method for semiconductor device
有权
缺陷检查装置,缺陷检查方法以及半导体装置的制造方法
- 专利标题: Defect inspection apparatus, defect inspection method, and manufacture method for semiconductor device
- 专利标题(中): 缺陷检查装置,缺陷检查方法以及半导体装置的制造方法
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申请号: US12404430申请日: 2009-03-16
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公开(公告)号: US08270703B2公开(公告)日: 2012-09-18
- 发明人: Naohiro Takahashi , Isao Motomura
- 申请人: Naohiro Takahashi , Isao Motomura
- 申请人地址: JP Yokohama
- 专利权人: Fujitsu Semiconductor Limited
- 当前专利权人: Fujitsu Semiconductor Limited
- 当前专利权人地址: JP Yokohama
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2008-151764 20080610; JP2008-302214 20081127
- 主分类号: G06K9/00
- IPC分类号: G06K9/00
摘要:
A distinguishing size for distinguishing a pseudo defect from a defect caused by a process trouble is stored in a first storage area. Defect data are stored in a second storage area. A processing unit detects a defect on a wafer surface, and stores the defect data in the second storage area. Before a defect detection process is completed for all areas of the wafer surface, a size of a defect detected in a partial area is compared with the distinguishing size stored in the first storage area. If the detected defect has a size equal to or larger than the distinguishing size, an alarm is output through an output unit, whereas if a defect having a size equal to or larger than the distinguishing size is not detected, the defect detection process is executed for the area still not subjected to the defect detection process.
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