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US08270131B2 Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same 有权
静电放电保护元件及静电放电保护芯片及其制造方法

Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same
摘要：
An electrostatic discharge (ESD) protection element is described, the ESD protection element including a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.
摘要（中）：

描述了静电放电（ESD）保护元件，ESD保护元件包括集电极区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

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