Invention Grant
- Patent Title: Semiconductor device including a magnetic tunnel junction and method of manufacturing the same
- Patent Title (中): 包括磁性隧道结的半导体器件及其制造方法
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Application No.: US12474974Application Date: 2009-05-29
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Publication No.: US08264053B2Publication Date: 2012-09-11
- Inventor: Keisuke Tsukamoto , Mikio Tsujiuchi
- Applicant: Keisuke Tsukamoto , Mikio Tsujiuchi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-204442 20080807
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/02
Abstract:
To provide a semiconductor device that has an improved adhesion between a bottom conductive layer and a protection film protecting an MTJ element. This semiconductor device includes a bottom electrode formed over a semiconductor substrate, an MTJ element part formed over a part of the bottom electrode by lamination of a bottom magnetic film, an insulating film, a top magnetic film, and a top electrode in this order, and a protection film formed over the bottom electrode so as to cover the MTJ element part, wherein the bottom electrode is formed by amorphized metal nitride and the protection film is formed by an insulating film containing nitrogen.
Public/Granted literature
- US20100032779A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-02-11
Information query
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