Invention Grant
- Patent Title: Air channel interconnects for 3-D integration
- Patent Title (中): 空气通道互连用于3-D集成
-
Application No.: US12536176Application Date: 2009-08-05
-
Publication No.: US08198174B2Publication Date: 2012-06-12
- Inventor: Louis L. Hsu , Brian L. Ji , Fei Liu , Conal E. Murray
- Applicant: Louis L. Hsu , Brian L. Ji , Fei Liu , Conal E. Murray
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: F. Chau & Associates, LLC
- Agent Louis J. Percello
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A three-dimensional (3D) chip stack structure and method of fabricating the structure thereof are provided. The 3D chip stack structure includes a plurality of vertically stacked chips which are interconnected and bonded together, wherein each of the vertically stacked chips include one or more IC device strata. The 3D chip stack structure further includes an air channel interconnect network embedded within the chip stack structure, and wherein the air channel interconnect network is formed in between at least two wafers bonded to each other of the vertically stacked wafers and in between at least two bonded wafers of the vertically stacked wafers at a bonding interface thereof. In addition, the 3D chip stack structure further includes one or more openings in a peripheral region of the chip stack structure that lead into and out of the air channel interconnect network, so that air can flow into and out of the air channel interconnect network through the one or more openings to remove heat from the chip stack structure.
Public/Granted literature
- US20110031633A1 AIR CHANNEL INTERCONNECTS FOR 3-D INTEGRATION Public/Granted day:2011-02-10
Information query
IPC分类: