Invention Grant
US08193824B2 Monitoring plasma induced damage during semiconductor wafer processes
有权
在半导体晶圆工艺期间监测等离子体引起的
- Patent Title: Monitoring plasma induced damage during semiconductor wafer processes
- Patent Title (中): 在半导体晶圆工艺期间监测等离子体引起的
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Application No.: US12433488Application Date: 2009-04-30
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Publication No.: US08193824B2Publication Date: 2012-06-05
- Inventor: Wu-Der Weng , Ji-Shyang Nieh
- Applicant: Wu-Der Weng , Ji-Shyang Nieh
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/26

Abstract:
A plasma damage detection test structure is disclosed. The plasma damage detection test structure includes a first antenna, a voltage source, a ground reference, a first transistor comprising a first source, a first gate, and a first drain. The plasma damage detection test structure further includes a second transistor comprising a second source, a second gate, and a second drain. The first gate is conductively coupled to said first antenna, said first drain and said second drain are conductively coupled to said voltage source, and said first source and said second source are conductively coupled to said ground reference. In various embodiments multiple antennas may be used. The antennas may be multiple configurations, such as a symmetric arrangement or asymmetric arrangement. In various embodiments, multiple transistors in parallel or cross-couple arrangements may be used.
Public/Granted literature
- US20090281745A1 Monitoring Plasma Induced Damage During Semiconductor Wafer Processes Public/Granted day:2009-11-12
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