Invention Grant
- Patent Title: Shielded gate trench MOSFET device and fabrication
- Patent Title (中): 屏蔽栅沟槽MOSFET器件和制造
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Application No.: US12583191Application Date: 2009-08-14
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Publication No.: US08193580B2Publication Date: 2012-06-05
- Inventor: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- Applicant: John Chen , Il Kwan Lee , Hong Chang , Wenjun Li , Anup Bhalla , Hamza Yilmaz
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor, Inc.
- Current Assignee: Alpha and Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device embodiment includes a substrate, an active gate trench in the substrate, and an asymmetric trench in the substrate. The asymmetric trench has a first trench wall and a second trench wall, the first trench wall is lined with oxide having a first thickness, and the second trench wall is lined with oxide having a second thickness that is different from the first thickness. Another semiconductor device embodiment includes a substrate, an active gate trench in the substrate; and a source polysilicon pickup trench in the substrate. The source polysilicon pickup trench includes a polysilicon electrode, and top surface of the polysilicon electrode is below a bottom of a body region. Another semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
Public/Granted literature
- US20110037120A1 Shielded gate trench MOSFET device and fabrication Public/Granted day:2011-02-17
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